The TOF.SIMS V provides detailed elemental and molecular information about surface, thin layers, interfaces of the sample, and gives a full three-dimensional analysis. Its unique design guarantees optimum performance in all fields of SIMS applications. The instrument is equipped with a reflectron TOF analyser giving high secondary ion transmission with high mass resolution, a sample chamber with a 5-axis manipulator (x, y, z, rotation and tilt) for flexible navigation, a fast entry load-lock, charge compensation for the analysis of insulators, a secondary electron detector for SEM imaging and a state of the art vacuum system. The SIMS is also equipped with sample heating and cooling and an in-situ sample preparation chamber. The current configuration is a Bismuth LMIG as the primary ion source and a dual column with C60 and Cs for sputtering.