Comparing depth profiling of oxide scale on SOFC interconnect-materials using ToF-SIMS with 69Ga+, Bi3+/Cs+ and C60+/C602+ as primary and sputter ions

In a paper by J. Hall, U. Bexell, J. S. Fletcher, S. Canovic and P. Malmberg, Oxide scale cross-sections of CeO2 coated FeCr based solid oxide fuel cell interconnect materials were examined using secondary ion mass spectrometry (SIMS) depth profiling. Secondary ion mass spectrometry sputter depth profiles using different ion sources; 69Ga+, Bi3+/Cs+ and C60+/C602+ were compared with TEM oxide scale cross-section and field emission gun–Auger electron spectroscopy depth profiling. The C60cluster ion depth profiles were less sensitive to type of matrix and gave the best correspondence to the TEM cross-section.

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